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LTC4444HMS8E-5#PBF

LTC4444HMS8E-5#PBF

IC MOSFET DVR N-CH SYNC HV 8MSOP

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Shenzhen
9401 pcs
Shanghai
3105 pcs
Hong Kong
6737 pcs
United States
5105 pcs
The above prices and inventory are for reference only, please consult customer service for the latest quotation and inventory!

Specifications of LTC4444HMS8E-5#PBF

Part Number LTC4444HMS8E-5#PBF
Date Code 2016
Quantity Available 24348 pcs
Manufacturer Linear Technology/Analog Devices
Lead Time Ship within 24 hours
QTY 3000
Datasheet LTC4444-5.pdf
Minimum Quantity More than 50pcs
Distributor SingSun
RoHS Status Lead free / RoHS Compliant
Ship From Hong Kong
Shipment Way EMS/SF/DHL/TNT/UPS/FedEx
Country of Assembly KOREA
Country of Diffusion UNITED STATES
Lot Number YP13211.82
MSL 3
Base Product Number LTC4444-5
Packaging Tube
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 4.5 V ~ 13.5 V
Logic Voltage - VIL, VIH 1.85V, 3.25V
Current - Peak Output (Source, Sink) 2.5A, 3A
Input Type Inverting
High Side Voltage - Max (Bootstrap) 114V
Rise / Fall Time (Typ) 8ns, 5ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package 8-MSOP-EP

LTC4444HMS8E-5#PBF Features

● Bootstrap Supply Voltage to 114V
● Wide VCC Voltage: 4.5V to 13.5V
● Adaptive Shoot-Through Protection
● 1.4A Peak Top Gate Pull-Up Current
● 1.75A Peak Bottom Gate Pull-Up Current
● 1.5Ω Top Gate Driver Pull-Down
● 0.75Ω Bottom Gate Driver Pull-Down
● 5ns Top Gate Fall Time Driving 1nF Load
● 8ns Top Gate Rise Time Driving 1nF Load
● 3ns Bottom Gate Fall Time Driving 1nF Load
● 6ns Bottom Gate Rise Time Driving 1nF Load
● Drives Both High and Low Side N-Channel MOSFETs
● Undervoltage Lockout
● Thermally Enhanced 8-Pin MSOP Package

LTC4444HMS8E-5#PBF Applications

● Distributed Power Architectures
● Automotive Power Supplies
● High Density Power Modules
● Telecommunication Systems

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LTC4444HMS8E-5#PBF Description

The LTC4444HMS8E-5#PBF is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance.

The LTC4444-5 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground.

The LTC4444HMS8E-5#PBF contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously.

LTC4444HMS8E-5#PBF Tags

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