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LTC4444EMS8E-5#PBF

LTC4444EMS8E-5#PBF

IC MOSFET DRIVER N-CH 8-MSOP

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Shenzhen
1814 pcs
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0 pcs
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0 pcs
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Specifications of LTC4444EMS8E-5#PBF

Part Number LTC4444EMS8E-5#PBF
Date Code 2125
Quantity Available 1814 pcs
Manufacturer Linear Technology/Analog Devices
Lead Time Ship within 24 hours
QTY 3000
Datasheet LTC4444-5.pdf
Minimum Quantity More than 50pcs
Distributor SingSun
RoHS Status Lead free / RoHS Compliant
Ship From Hong Kong
Shipment Way EMS/SF/DHL/TNT/UPS/FedEx
Country of Assembly SOUTH KOREA
Country of Diffusion KOREA
Lot Number TA16115.38
MSL 1
Base Product Number LTC4444-5
Packaging Tube
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 4.5 V ~ 13.5 V
Logic Voltage - VIL, VIH 1.85V, 3.25V
Current - Peak Output (Source, Sink) 2.5A, 3A
Input Type Inverting
High Side Voltage - Max (Bootstrap) 114V
Rise / Fall Time (Typ) 8ns, 5ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package 8-MSOP-EP

LTC4444EMS8E-5#PBF Features

● Bootstrap Supply Voltage to 114V
● Wide VCC Voltage: 4.5V to 13.5V
● Adaptive Shoot-Through Protection
● 1.4A Peak Top Gate Pull-Up Current
● 1.75A Peak Bottom Gate Pull-Up Current
● 1.5Ω Top Gate Driver Pull-Down
● 0.75Ω Bottom Gate Driver Pull-Down
● 5ns Top Gate Fall Time Driving 1nF Load
● 8ns Top Gate Rise Time Driving 1nF Load
● 3ns Bottom Gate Fall Time Driving 1nF Load
● 6ns Bottom Gate Rise Time Driving 1nF Load
● Drives Both High and Low Side N-Channel MOSFETs
● Undervoltage Lockout
● Thermally Enhanced 8-Pin MSOP Package

LTC4444EMS8E-5#PBF Applications

● Distributed Power Architectures
● Automotive Power Supplies
● High Density Power Modules
● Telecommunication Systems

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LTC4444EMS8E-5#PBF Description

The LTC4444EMS8E-5#PBF is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance.

The LTC4444-5 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground.

The LTC4444EMS8E-5#PBF contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously.

LTC4444EMS8E-5#PBF Tags

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